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| SI6544DQ Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (W) 0.035 @ VGS = 10 V 0.050 @ VGS = 4.5 V ID (A) "4.0 "3.4 "3.5 "2.5 P-Channel -30 0.045 @ VGS = -10 V 0.090 @ VGS = -4.5 V D1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S1 N-Channel MOSFET D2 P-Channel MOSFET D 8 D2 S2 S2 G2 G1 G2 SI6544DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg N-Channel 30 "20 "4.0 "3.2 "20 1.25 1.0 P-Channel -30 "20 "3.5 "2.8 "20 -1.25 Unit V A W 0.64 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70668 S-56944--Rev. C, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA N- or P-Channel 125 Unit _C/W 2-1 SI6544DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = -30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS = -30 V, VGS = 0 V, TJ = 55_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VDS w -5 V, VGS = -10 V VGS = 10 V, ID = 4.0 A DiS OS Ri Drain-Source On-State Resistancea rDS(on) VGS = -10 V, ID = -3.5 A VGS = 4.5 V, ID = 3.4 A VGS = -4.5 V, ID = -2.5 A Forward Transconductancea gfs VDS = 15 V, ID = 4.0 A VDS = -15 V, ID = - 3.5 A IS = 1.25 A, VGS = 0 V IS = -1.25 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 A -20 0.027 0.035 0.038 0.062 13 S 7.2 0.73 -0.77 1.2 V -1.2 0.035 0.045 0.050 0.090 W 1.0 V -1.0 "100 "100 1 -1 5 -5 mA A nA Symbol Test Condition Min Typ Max Unit Gate-Body Leakage IGSS Diode Forward Voltagea VSD Dynamicb N-Ch Total Gate Charge Qg N-Channel N Ch l Channel VDS = 15 V, VGS = 10 V, ID = 4.0 A P-Channel VDS = -15 V VGS = -10 V ID = -3.5 A 15 V, 10 V, 35 Gate-Drain Charge Qgd P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time td(on) N-Channel N Ch l VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel VDD = -15 V RL = 15 W 15 V, ID ^ -1 A, VGEN = -10 V, RG = 6 W 1 10 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Source-Drain Reverse R R Recovery Time Ti tf IF = 1.25 A, di/dt = 100 A/ms IF = -1.25 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 17.5 17 4.0 C nC 4.4 2.5 3.1 12 13 9 10 25 33 20 10 25 30 20 20 20 20 50 ns 60 40 20 60 60 30 30 Gate-Source Charge Qgs Rise Time tr Turn-Off Delay Time td(off) trr Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70668 S-56944--Rev. C, 23-Nov-98 SI6544DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 5 V 4V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 N-CHANNEL Transfer Characteristics 12 12 8 8 TC = 125_C 4 25_C -55_C 0 4 3V 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.06 1500 Capacitance Ciss 1200 0.05 r DS(on)- On-Resistance ( W ) VGS = 4.5 V C - Capacitance (pF) 0.04 900 0.03 VGS = 10 V 600 Coss 300 Crss 0 0.02 0.01 0 0 4 8 12 16 20 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 VDS = 15 V ID = 4.0 A 1.8 1.6 r DS(on)- On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 -50 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 8 VGS = 10 V ID = 4.0 A 6 4 2 0 0 4 8 12 16 20 Qg - Total Gate Charge (nC) -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 70668 S-56944--Rev. C, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-3 SI6544DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.12 N-CHANNEL On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on)- On-Resistance ( W ) 0.09 ID = 4.0 A TJ = 150_C 0.06 TJ = 25_C 0.03 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 1 3 5 7 9 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 ID = 250 mA 0.3 V GS(th) Variance (V) 32 40 Single Pulse Power Power (W) 0.0 24 -0.3 16 -0.6 8 -0.9 -50 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70668 S-56944--Rev. C, 23-Nov-98 SI6544DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 to 5 V 20 P-CHANNEL Transfer Characteristics 16 I D - Drain Current (A) 16 4V I D - Drain Current (A) 12 12 8 8 TC = 125_C 4 4 3V 25_C -55_C 0 0 2 4 6 8 10 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 1500 Capacitance Ciss r DS(on)- On-Resistance ( W ) 0.16 C - Capacitance (pF) 1200 0.12 900 0.08 VGS = 4.5 V VGS = 10 V 600 Coss 300 Crss 0.04 0 0 4 8 12 16 20 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 VDS = 15 V ID = 4.0 A V GS - Gate-to-Source Voltage (V) Gate Charge 1.8 1.6 r DS(on)- On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 4.0 A 8 6 4 2 0 0 4 8 12 16 20 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70668 S-56944--Rev. C, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-5 SI6544DQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.20 P-CHANNEL On-Resistance vs. Gate-to-Source Voltage TJ = 150_C r DS(on)- On-Resistance ( W ) 10 I S - Source Current (A) 0.16 0.12 TJ = 25_C 0.08 ID = 4.0 A 0.04 1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 0.8 0.6 Threshold Voltage 40 Single Pulse Power 30 0.4 V GS(th) Variance (V) 0.2 -0.0 -0.2 -0.4 -0.6 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 ID = 250 mA Power (W) 20 10 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125_C/W 3. TJM - TA = PDMZthJA(t) 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 4. Surface Mounted 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 70668 S-56944--Rev. C, 23-Nov-98 |
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